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Samsung introduces a new memory module with twice the performance of DDR4

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On Thursday, Samsung announced that it has expanded its portfolio of DRAM memory by introducing a 512GB DDR5 module based on high-end metal port processing technology (HKMG). The new memory module is designed to meet the high-bandwidth requirements of high-bandwidth loads in supercomputers, artificial intelligence (AI) and machine learning (ML). The South Korean company said its DDR5 DRAM is capable of delivering more than twice the performance of existing DDR4 modules with data rates of up to 7,200 megabits per second (Mbps).

Instead of using traditional silicon oxynitride, Samsung prefers to use HKMG technology for the insulation layer of the new memory module to reduce power consumption by 13 percent over DDR4 modules. The new material will be able to reduce current leakage and help the module reach new levels of productivity, the company said.

Samsung used the HKMG process for the first time while designing its GDDR6 memory in 2018. Its adoption of the new module is aimed primarily at attracting data centers and enterprise customers looking for high-speed memory solutions for AI, ML and operations processing. for data analysis.

Samsung’s DDR5 DRAM relies on eight layers of 16Gb DRAM chips, using silicon-based (TSV) technology to provide 512 GB of capacity. However, the company is sampling different versions of the DDR5 module to meet different memory needs over time.

Although existing desktops and servers support mostly DDR4, Intel has already shown some interest in DDR5 modules. The chipmaker is also working with Samsung, especially for its new development.

“Intel’s engineering teams are working closely with memory leaders such as Samsung to deliver fast, energy-efficient DDR5 memory that is optimized for performance and compatible with our upcoming Intel Xeon Scalable processors, codenamed Sapphire Rapids,” said Carolyn. Durand, vice president and general manager of Intel’s Memory and IO Technology, in a prepared statement.

In addition to Intel, Samsung also works with Advanced micro devices (AMD) and sent samples of its new memory module to some data center platform developers, Bloomberg reports in Thursday.

“By implementing this type of innovation in DRAM manufacturing, we are able to offer our customers highly efficient but energy efficient computer power memory solutions needed for medical research, financial markets, autonomous driving, smart cities and beyond, Said Young-Soo Sohn, vice president of the DRAM memory planning / activation group at Samsung Electronics, in a statement.

Samsung’s DDR5 DRAM module is currently in the testing phase, although it is expected to arrive for customers by the end of 2021.

It should be noted that Samsung is not the only semiconductor company to start working on the DDR5 standard. Its domestic competitor and the second largest manufacturer of memory chips SK Hynix bring what you claim to the world’s first DDR5 DRAM in October last year The American company Rambus too announced back in September 2017 for the development of chipsets for DDR5 memory interface.

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